DFN1610封裝系列ESD保護(hù)器

    DFN1610封裝系列ESD保護(hù)器具有反應(yīng)速度快,導(dǎo)通電壓低、體積小、集成度高、同時(shí)實(shí)現(xiàn)多條數(shù)據(jù)線保護(hù),電容值較低,是理想的高頻數(shù)據(jù)保護(hù)器件,多樣化封裝,完全可實(shí)現(xiàn)在不同位置、空間上靈活的集成化ESD保護(hù)。封裝:DFN-1006

    • 品牌: 集電通/JTDFUSE
    • 分類: ESD保護(hù)器
    • 最大電壓: --
    • 額定電流: --

    JDTFUSE

    Part No.VRWM
    .max
    (V)
    VBR
    .min
    (V)
    CJ
    .typ
    (pF)
    Ppp
    @8/20μs
    (W)
    Ipp
    @8/20μs
    (A)
    IR
    .max
    (μA)
    Contact
    (kV)
    ChannelInner
    Diagram
    PackagePDF
    JEN1610-3.3V3.33.575018751501.0±301JDTFUSEDFN1610JDTFUSE
    JEN1610-5V56.055018751251.0±301JDTFUSEDFN1610JDTFUSE
    JEN1610-7V77.555018751251.0±301JDTFUSEDFN1610JDTFUSE
    JEN1610-9V9105251875900.5±301JDTFUSEDFN1610JDTFUSE
    JEN1610-12V1212.65001875750.1±301JDTFUSEDFN1610JDTFUSE
    JEN1610-15V1516.54501875600.1±301JDTFUSEDFN1610JDTFUSE
    JEN1610-18V1819.63501875500.1±301JDTFUSEDFN1610JDTFUSE
    JEN1610-24V2426.72001875350.1±301JDTFUSEDFN1610JDTFUSE
    JEN1610-36V36371501875250.1±301JDTFUSEDFN1610JDTFUSE
    JEN1610-5V-ULC56.50.310040.2±221JDTFUSEDFN1610JDTFUSE


    VRWM:Reverse Working Voltage

    VBR:Snap-Back Voltage

    CJ:Junction Capacitance

    Ppp:Peak Pulse Power

    Ipp:Peak Pulse Current

    IR:Reverse Leakage Current

    Contact:IEC 61000-4-2;Contact Discharge


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    標(biāo)簽: ESD保護(hù)器 DFN1610